|
|
SGG150-12CS2
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
200(150) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
400(300) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+125 |
|
oC |
|
Tstg |
|
|
-40...+125 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
200(150) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
400(300) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=125oC |
|
1400 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=6mA, Tj=25oC |
4.5 |
5.5 |
6.5 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25oC |
|
0.2 |
0.6 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25oC |
-400 |
|
400 |
nA |
|
rce |
Uge=15V, Tj=25(125)oC |
|
6(8) |
8(10) |
mOm |
|
Uce(SAT) |
Ic=150A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
13 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
2 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
2 |
|
nF |
|
Lce |
|
|
|
20 |
nH |
|
td (on) |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
125 |
|
ns |
|
tr |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
50 |
|
ns |
|
td (off) |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
620 |
|
ns |
|
tf |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
55 |
|
ns |
|
Eon |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
18 |
|
mj |
|
Eoff |
Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V |
|
15 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=150A, Uge=0V, Tj=25(125)oC |
|
2(1.8) |
2.5(1.9) |
V |
|
Irrm |
If=150A, Uge=0V, diF/dt=1200A/mks, Tj=125oC, Ur=600V |
|
125 |
|
A |
|
trr |
If=150A, Uge=0V, diF/dt=1200A/mks, Tj=125oC, Ur=600V |
|
200 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.1 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.23 |
|
K/W |
|
Rthcs |
per module |
|
0.03 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
324 |
g |
|
Габариты |
|
|
|
106.4х61.4х30.5 |
mm |
SGG200-12CS2
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
300(200) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
600(400) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+150 |
|
oC |
|
Tstg |
|
|
-40...+125 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
300(200) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
600(400) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=125oC |
|
1800 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=8mA, Tj=25oC |
4.5 |
5.5 |
6.5 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25oC |
|
0.2 |
0.6 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25oC |
-400 |
|
400 |
nA |
|
rce |
Uge=15V, Tj=25(125)oC |
|
4.5(6) |
6(7.5) |
mOm |
|
Uce(SAT) |
Ic=200A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
17 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
2 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
2 |
|
nF |
|
Lce |
|
|
|
20 |
nH |
|
td (on) |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
170 |
|
ns |
|
tr |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
55 |
|
ns |
|
td (off) |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
660 |
|
ns |
|
tf |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
60 |
|
ns |
|
Eon |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
18 |
|
mj |
|
Eoff |
Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V |
|
15 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=200A, Uge=0V, Tj=25(125)oC |
|
2(1.8) |
2.5(1.9) |
V |
|
Irrm |
If=180A, Uge=0V, diF/dt=1800A/mks, Tj=125oC, Ur=600V |
|
180 |
|
A |
|
trr |
If=180A, Uge=0V, diF/dt=1800A/mks, Tj=125oC, Ur=600V |
|
200 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.09 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.15 |
|
K/W |
|
Rthcs |
per module |
|
0.03 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
324 |
g |
|
Габариты |
|
|
|
106.4х61.4х30.5 |
mm |
SGG300-12CS2
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
450(300) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
900(600) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+150 |
|
oC |
|
Tstg |
|
|
-40...+125 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
450(300) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
900(600) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=125oC |
|
2200 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=5mA, Tj=25oC |
5 |
|
7 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25oC |
|
0.2 |
0.6 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25oC |
-400 |
|
400 |
nA |
|
rce |
Uge=15V, Tj=25(125)oC |
|
3(4) |
4(5) |
mOm |
|
Uce(SAT) |
Ic=300A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
26 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
3 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
3 |
|
nF |
|
Lce |
|
|
|
20 |
nH |
|
td (on) |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
110 |
|
ns |
|
tr |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
60 |
|
ns |
|
td (off) |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
800 |
|
ns |
|
tf |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
60 |
|
ns |
|
Eon |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
22 |
|
mj |
|
Eoff |
Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V |
|
22 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=300A, Uge=0V, Tj=25(125)oC |
|
2.3(1.9) |
2.55(2.0) |
V |
|
Irrm |
If=225A, Uge=0V, diF/dt=2000A/mks, Tj=125oC, Ur=600V |
|
200 |
|
A |
|
trr |
If=225A, Uge=0V, diF/dt=2000A/mks, Tj=125oC, Ur=600V |
|
220 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.06 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.21 |
|
K/W |
|
Rthcs |
per module |
|
0.03 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
324 |
g |
|
Габариты |
|
|
|
106.4х61.4х30.5 |
mm |
|
|
