|
|
SGG50-12CS1
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
75(50) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
150(100) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+125 |
|
oC |
|
Tstg |
|
|
-40...+150 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
75(50) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
150(100) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=150oC |
|
500 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=2mA, Tj=25oC |
4.5 |
5.5 |
6.5 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25(125)oC |
|
0.1 |
0.3 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25(125)oC |
-200 |
|
200 |
nA |
|
Uce(TO) |
Tj=25(125)oC |
|
1(0.9) |
1.15(1.05) |
V |
|
rce |
Uge=15V, Tj=25(125)oC |
|
18(24) |
24(30) |
mOm |
|
Uce(SAT) |
Ic=50A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
4.5 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
0.6 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
0.55 |
|
nF |
|
Lce |
|
|
|
25 |
nH |
|
RCC+EE |
terminals-chip, Tj=25(125)oC |
|
0.75(1) |
|
mOm |
|
Isc |
tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V |
|
280 |
|
A |
|
td (on) |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
90 |
|
ns |
|
tr |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
55 |
|
ns |
|
td (off) |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
440 |
|
ns |
|
tf |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
40 |
|
ns |
|
Eon |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
5.7 |
|
mj |
|
Eoff |
Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
4.7 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=50A, Uge=0V, Tj=25(125)oC |
|
2(1.8) |
2.5(1.9) |
V |
|
Uto |
Tj=25(125)oC |
|
1.1 |
1.2 |
V |
|
Irrm |
If=50A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V |
|
40 |
|
A |
|
trr |
If=50A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V |
|
400 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.3 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.65 |
|
K/W |
|
Rthcs |
per module |
|
0.05 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
176 |
g |
|
Габариты |
|
|
|
94х34х30.5 |
mm |
SGG75-12CS1
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
100(75) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
200(150) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+125 |
|
oC |
|
Tstg |
|
|
-40...+150 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
100(75) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
200(150) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=150oC |
|
700 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=3mA, Tj=25oC |
4.5 |
5.5 |
6.5 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25oC |
|
0.1 |
0.3 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25oC |
-200 |
|
200 |
nA |
|
Uce(TO) |
Tj=25(125)oC |
|
1(0.9) |
1.15(1.05) |
V |
|
rce |
Uge=15V, Tj=25(125)oC |
|
13(16) |
16(20) |
mOm |
|
Uce(SAT) |
Ic=75A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
6.2 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
0.74 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
0.71 |
|
nF |
|
Lce |
|
|
|
25 |
nH |
|
RCC+EE |
terminals-chip, Tj=25(125)oC |
|
0.75(1) |
|
mOm |
|
Isc |
tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V |
|
420 |
|
A |
|
td (on) |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
150 |
|
ns |
|
tr |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
45 |
|
ns |
|
td (off) |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
560 |
|
ns |
|
tf |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
50 |
|
ns |
|
Eon |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
8.5 |
|
mj |
|
Eoff |
Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
7.5 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=75A, Uge=0V, Tj=25(125)oC |
|
2(1.8) |
2.5(1.9) |
V |
|
Uto |
Tj=25oC |
|
1.1 |
1.2 |
V |
|
Irrm |
If=75A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V |
|
65 |
|
A |
|
trr |
If=75A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V |
|
200 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.2 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.5 |
|
K/W |
|
Rthcs |
per module |
|
0.05 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
176 |
g |
|
Габариты |
|
|
|
94х34х30.5 |
mm |
SGG100-12CS1
|
Параметр |
Условия |
Величина |
Единица измерения |
| min. |
typ. |
max. |
| Общие характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
|
|
|
|
|
Uces |
|
|
1200 |
|
V |
|
Ic |
Tc=25(80)oC |
|
150(100) |
|
A |
|
Icrm |
Tc=25(80)oC, Tp=1ms |
|
300(200) |
|
A |
|
Uges |
|
|
20% |
|
V |
|
Tvj |
|
|
-40...+125 |
|
oC |
|
Tstg |
|
|
-40...+150 |
|
oC |
|
Uisol |
RMS, 1min, 50Hz |
|
2500 |
|
V |
|
Inverse diode |
|
|
|
|
|
|
If |
Tc=25(80)oC |
|
150(95) |
|
A |
|
Ifrm |
Tc=25(80)oC, tp=1min |
|
300(190) |
|
A |
|
Ifsm |
tp=10ms, sin, Tj=150oC |
|
1000 |
|
A |
|
Частные характеристики |
Тс=25оС, если не указано иное |
|
IGBT |
|
min. |
typ. |
max. |
|
|
Uge(th) |
Uge=Uce, Ic=4mA, Tj=25oC |
4.5 |
5.5 |
6.5 |
V |
|
Ices |
Uge=0V, Uce=Uces, Tj=25oC |
|
0.1 |
0.3 |
mA |
|
Iges |
Uge=0V, Uge=+/-20V, Tj=25oC |
-200 |
|
200 |
nA |
|
Uce(TO) |
Tj=25(125)oC |
|
1(0.9) |
1.15(1.05) |
V |
|
rce |
Uge=15V, Tj=25(125)oC |
|
9(12) |
12(15) |
mOm |
|
Uce(SAT) |
Ic=100A, Uge=15V, chip level |
|
1.9(2.1) |
2.35(2.55) |
V |
|
Cies |
Uge=0V, Uce=25V, f=1MHz |
|
9 |
|
nF |
|
Coes |
Uge=0V, Uce=25V, f=1MHz |
|
1 |
|
nF |
|
Cres |
Uge=0V, Uce=25V, f=1MHz |
|
1 |
|
nF |
|
Lce |
|
|
|
25 |
nH |
|
RCC+EE |
terminals-chip, Tj=25(125)oC |
|
0.75(1) |
|
mOm |
|
Isc |
tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V |
|
470 |
|
A |
|
td (on) |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
190 |
|
ns |
|
tr |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
50 |
|
ns |
|
td (off) |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
590 |
|
ns |
|
tf |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
50 |
|
ns |
|
Eon |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
11.5 |
|
mj |
|
Eoff |
Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V |
|
9.5 |
|
mj |
|
Inverse diode |
|
|
|
|
|
|
Uf |
If=100A, Uge=0V, Tj=25(125)oC |
|
2.3(1.9) |
2.55(2.0) |
V |
|
Uto |
Tj=25oC |
|
1.1 |
1.2 |
V |
|
Irrm |
If=100A, Uge=0V, diF/dt=600A/mks, Tj=125oC, Ur=600V |
|
62 |
|
A |
|
trr |
If=100A, Uge=0V, diF/dt=600A/mks, Tj=125oC, Ur=600V |
|
200 |
|
ns |
|
Температурные характеристики |
|
Rthjc |
per IGBT |
|
0.17 |
|
K/W |
|
Rthjc D |
per inverse diode |
|
0.45 |
|
K/W |
|
Rthcs |
per module |
|
0.05 |
|
K/W |
| Масса-габаритные характеристики |
|
Масса |
|
|
|
176 |
g |
|
Габариты |
|
|
|
94х34х30.5 |
mm |
|
|
