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SGG150-12CS2

 

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum rated values

=25, unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

200(150)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

400(300)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+125

 

oC

Tstg

 

 

-40...+125

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

200(150)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

400(300)

 

A

Ifsm

tp=10ms, sin, Tj=125oC

 

1400

 

A

Characteristic values

=25, unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=6mA, Tj=25oC

4.5

5.5

6.5

V

Ices

Uge=0V, Uce=Uces, Tj=25oC

 

0.2

0.6

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25oC

-400

 

400

nA

rce

Uge=15V, Tj=25(125)oC

 

6(8)

8(10)

mOm

Uce(SAT)

Ic=150A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

13

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

2

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

2

 

nF

Lce

 

 

 

20

nH

td (on)

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

125

 

ns

tr

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

50

 

ns

td (off)

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

620

 

ns

tf

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

55

 

ns

Eon

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

18

 

mj

Eoff

Ucc=600V, Ic=150A, Rgon=Rgoff=7Om, Tj=125oC, Vge=+/-15V

 

15

 

mj

Inverse diode

 

 

 

 

 

Uf

If=150A, Uge=0V, Tj=25(125)oC

 

2(1.8) 

 2.5(1.9)

Irrm

If=150A, Uge=0V, diF/dt=1200A/mks, Tj=125oC, Ur=600V

 

125

 

 A

trr

If=150A, Uge=0V, diF/dt=1200A/mks, Tj=125oC, Ur=600V

 

200

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.1

 

K/W

Rthjc D

per inverse diode

 

0.23

 

K/W

Rthcs

per module

 

0.03

 

K/W

Mechanical properties

Weight

 

 

 

324

g

Dimension

 

 

 

106.461.430.5

mm

 

 

SGG200-12CS2

 

Symbol

Conditions

 Values

Unit

min.

typ.

max.

Maximum rated values

=25, unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

300(200)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

600(400)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+150

 

oC

Tstg

 

 

-40...+125

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

300(200)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

600(400)

 

A

Ifsm

tp=10ms, sin, Tj=125oC

 

1800

 

A

Characteristic values

=25, unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=8mA, Tj=25oC

4.5

5.5

6.5

V

Ices

Uge=0V, Uce=Uces, Tj=25oC

 

0.2

0.6

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25oC

-400

 

400

nA

rce

Uge=15V, Tj=25(125)oC

 

4.5(6)

6(7.5)

mOm

Uce(SAT)

Ic=200A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

17

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

2

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

2

 

nF

Lce

 

 

 

20

nH

td (on)

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

170

 

ns

tr

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

55

 

ns

td (off)

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

660

 

ns

tf

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

60

 

ns

Eon

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

18

 

mj

Eoff

Ucc=600V, Ic=200A, Rgon=Rgoff=5Om, Tj=125oC, Vge=+/-15V

 

15

 

mj

Inverse diode

 

 

 

 

 

Uf

If=200A, Uge=0V, Tj=25(125)oC

 

2(1.8) 

 2.5(1.9)

Irrm

If=180A, Uge=0V, diF/dt=1800A/mks, Tj=125oC, Ur=600V

 

180

 

 A

trr

If=180A, Uge=0V, diF/dt=1800A/mks, Tj=125oC, Ur=600V

 

200

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.09

 

K/W

Rthjc D

per inverse diode

 

0.15

 

K/W

Rthcs

per module

 

0.03

 

K/W

Mechanical properties

Weight

 

 

 

324

g

Dimension

 

 

 

106.461.430.5

mm

 

 

SGG300-12CS2

 

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum rated values

=25, unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

450(300)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

900(600)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+150

 

oC

Tstg

 

 

-40...+125

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

450(300)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

900(600)

 

A

Ifsm

tp=10ms, sin, Tj=125oC

 

2200

 

A

Characteristic values

=25, unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=5mA, Tj=25oC

5

 

7

V

Ices

Uge=0V, Uce=Uces, Tj=25oC

 

0.2

0.6

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25oC

-400

 

400

nA

rce

Uge=15V, Tj=25(125)oC

 

3(4)

4(5)

mOm

Uce(SAT)

Ic=300A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

26

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

3

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

3

 

nF

Lce

 

 

 

20

nH

td (on)

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

110

 

ns

tr

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

60

 

ns

td (off)

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

800

 

ns

tf

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

60

 

ns

Eon

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

22

 

mj

Eoff

Ucc=600V, Ic=600A, Rgon=Rgoff=4.7Om, Tj=125oC, Vge=+/-15V

 

22

 

mj

Inverse diode

 

 

 

 

 

Uf

If=300A, Uge=0V, Tj=25(125)oC

 

2.3(1.9) 

 2.55(2.0)

Irrm

If=225A, Uge=0V, diF/dt=2000A/mks, Tj=125oC, Ur=600V

 

200

 

 A

trr

If=225A, Uge=0V, diF/dt=2000A/mks, Tj=125oC, Ur=600V

 

220

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.06

 

K/W

Rthjc D

per inverse diode

 

0.21

 

K/W

Rthcs

per module

 

0.03

 

K/W

Mechanical properties

Weight

 

 

 

324

g

Dimension

 

 

 

106.461.430.5

mm

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