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SGG50-12CS1

 

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum rated values

=25, unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

75(50)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

150(100)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+125

 

oC

Tstg

 

 

-40...+150

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

75(50)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

150(100)

 

A

Ifsm

tp=10ms, sin, Tj=150oC

 

500

 

A

Characteristic values

=25, unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=2mA, Tj=25oC

4.5

5.5

6.5

V

Ices

Uge=0V, Uce=Uces, Tj=25(125)oC

 

0.1

0.3

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25(125)oC

-200

 

200

nA

Uce(TO)

Tj=25(125)oC

 

1(0.9)

1.15(1.05)

V

rce

Uge=15V, Tj=25(125)oC

 

18(24)

24(30)

mOm

Uce(SAT)

Ic=50A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

4.5

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

0.6

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

0.55

 

nF

Lce

 

 

 

25

nH

RCC+EE

terminals-chip, Tj=25(125)oC

 

0.75(1)

 

mOm

Isc

tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V 

 

280

 

A

td (on)

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

90

 

ns

tr

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

55

 

ns

td (off)

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

440

 

ns

tf

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

40

 

ns

Eon

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

5.7

 

mj

Eoff

Ucc=600V, Ic=50A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

4.7

 

mj

Inverse diode

 

 

 

 

 

Uf

If=50A, Uge=0V, Tj=25(125)oC

 

2(1.8) 

 2.5(1.9)

Uto

Tj=25(125)oC

 

 1.1

 1.2

 V

Irrm

If=50A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V

 

 40

 

 A

trr

If=50A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V

 

400 

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.3

 

K/W

Rthjc D

per inverse diode

 

0.65

 

K/W

Rthcs

per module

 

0.05

 

K/W

Mechanical properties

Weight

 

 

 

176

g

Dimension

 

 

 

943430.5

mm

 

 

SGG75-12CS1

 

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum rated values

=25, unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

100(75)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

200(150)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+125

 

oC

Tstg

 

 

-40...+150

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

100(75)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

200(150)

 

A

Ifsm

tp=10ms, sin, Tj=150oC

 

700

 

A

Characteristic values

=25, unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=3mA, Tj=25oC

4.5

5.5

6.5

V

Ices

Uge=0V, Uce=Uces, Tj=25oC

 

0.1

0.3

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25oC

-200

 

200

nA

Uce(TO)

Tj=25(125)oC

 

1(0.9)

1.15(1.05)

V

rce

Uge=15V, Tj=25(125)oC

 

13(16)

16(20)

mOm

Uce(SAT)

Ic=75A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

6.2

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

0.74

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

0.71

 

nF

Lce

 

 

 

25

nH

RCC+EE

terminals-chip, Tj=25(125)oC

 

0.75(1)

 

mOm

Isc

tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V 

 

420

 

A

td (on)

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

150

 

ns

tr

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

45

 

ns

td (off)

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

560

 

ns

tf

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

50

 

ns

Eon

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

8.5

 

mj

Eoff

Ucc=600V, Ic=75A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

7.5

 

mj

Inverse diode

 

 

 

 

 

Uf

If=75A, Uge=0V, Tj=25(125)oC

 

2(1.8) 

 2.5(1.9)

Uto

Tj=25oC

 

1.1

 1.2

 V

Irrm

If=75A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V

 

65

 

 A

trr

If=75A, Uge=0V, diF/dt=900A/mks, Tj=125oC, Ur=600V

 

200

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.2

 

K/W

Rthjc D

per inverse diode

 

0.5

 

K/W

Rthcs

per module

 

0.05

 

K/W

Mechanical properties

Weight

 

 

 

176

g

Dimension

 

 

 

943430.5

mm

 

 

SGG100-12CS1

 

Symbol

Conditions

Values

Unit

min.

typ.

max.

Maximum rated values

=25,unless otherwise specified

IGBT

 

 

 

 

 

Uces

 

 

1200

 

V

Ic

Tc=25(80)oC

 

150(100)

 

A

Icrm

Tc=25(80)oC, Tp=1ms

 

300(200)

 

A

Uges

 

 

20%

 

V

Tvj

 

 

-40...+125

 

oC

Tstg

 

 

-40...+150

 

oC

Uisol

RMS, 1min, 50Hz

 

2500

 

V

Inverse diode

 

 

 

 

 

If

Tc=25(80)oC

 

150(95)

 

A

Ifrm

Tc=25(80)oC, tp=1min

 

300(190)

 

A

Ifsm

tp=10ms, sin, Tj=150oC

 

1000

 

A

Characteristic values

=25,unless otherwise specified

IGBT

 

min.

typ.

max.

 

Uge(th)

Uge=Uce, Ic=4mA, Tj=25oC

4.5

5.5

6.5

V

Ices

Uge=0V, Uce=Uces, Tj=25oC

 

0.1

0.3

mA

Iges

Uge=0V, Uge=+/-20V, Tj=25oC

-200

 

200

nA

Uce(TO)

Tj=25(125)oC

 

1(0.9)

1.15(1.05)

V

rce

Uge=15V, Tj=25(125)oC

 

9(12)

12(15)

mOm

Uce(SAT)

Ic=100A, Uge=15V, chip level

 

1.9(2.1)

2.35(2.55)

V

Cies

Uge=0V, Uce=25V, f=1MHz

 

9

 

nF

Coes

Uge=0V, Uce=25V, f=1MHz

 

1

 

nF

Cres

Uge=0V, Uce=25V, f=1MHz

 

1

 

nF

Lce

 

 

 

25

nH

RCC+EE

terminals-chip, Tj=25(125)oC

 

0.75(1)

 

mOm

Isc

tpsc<10mks, Uge=15V, Tvj=125oC, Ucc=900V, Ucem<1200V 

 

470

 

A

td (on)

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

190

 

ns

tr

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

50

 

ns

td (off)

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

590

 

ns

tf

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

50

 

ns

Eon

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

11.5

 

mj

Eoff

Ucc=600V, Ic=100A, Rgon=Rgoff=15Om, Tj=125oC, Vge=+/-15V

 

9.5

 

mj

Inverse diode

 

 

 

 

 

Uf

If=100A, Uge=0V, Tj=25(125)oC

 

2.3(1.9) 

 2.55(2.0)

Uto

Tj=25oC

 

1.1

 1.2

 V

Irrm

If=100A, Uge=0V, diF/dt=600A/mks, Tj=125oC, Ur=600V

 

62

 

 A

trr

If=100A, Uge=0V, diF/dt=600A/mks, Tj=125oC, Ur=600V

 

200

 

 ns

Thermal properties

Rthjc

per IGBT

 

0.17

 

K/W

Rthjc D

per inverse diode

 

0.45

 

K/W

Rthcs

per module

 

0.05

 

K/W

Mechanical properties

Weight

 

 

 

176

g

Dimension

 

 

 

943430.5

mm

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